Publications

Book

 Reliability Characteristics of Rare-earth oxides and Gate Stacks on Ge

Book

 

 

 

 

 

Selected Publications

J27.    S. Kupke, S. Knebel, S. Rahman, S. Slesazeck and T. Mikolajick, R. Agaiby and M. Trentzsch, ‘Dynamic off-state TDDB of ultra short channel HKMG nFETS and its implications on CMOS logic reliability’ IEEE IRPS 2014, HI , 5B.1.1-5B.1.6, (June 2014). [pdf]

J26.   C. Stehl, M. Fischer, S. Gsell, E. Berdermann, M. S. Rahman, and M. Traeger, O. Klein, and M. Schreck,  ‘Efficiency of dislocation density reduction during heteroepitaxial growth of diamond for detector applications’  Applied Physics Letter, vol. 103, no.15, 151905 ( 2013).

J25.     M. S. Rahman, E. K. Evangelou, N. Konofaos, and A. Dimoulas ‘ Gate Stack Dielectric Degradation of Rare-Earth Oxides Grown on High Mobility Ge Substrates’ J.  Applied Physics, vol. 112, 094501 (2012). [pdf]

J24.     M. S. Rahman, E. K. Evangelou, ‘Dielectric relaxation and Charge trapping characteristics study in Germanium based MOS devices with HfO2/Dy2O3 gate stacks ‘ IEEE Trans. Electron Devices, vol. 58, no.10, pp. 3549-3558 (2011). [pdf]

J23.     M. S. Rahman, E. K. Evangelou, A. Dimoulas, G. Mavrou, and S. Galata, “Current Instabilities in REOs-HfO2 gate stacks grown on Germanium based MOS devices due to Maxwell-Wagner instabilities and dielectrics relaxation”, J.  Vac. Sci. Technol. B, 29(1)  01AB06 (2011). [pdf]

J22.     M. S. Rahman, E. K. Evangelou, and A. Dimoulas, “Maxwell-Wagner Instabilities and Defects Generation during CVS in REO-HfO2 Gate Stacks Grown on Germanium Based MOS Devices”, ECS Transactions, vol. 33(3), pp.367-374 (2010). [pdf]

J21.     E. Berdermann, M. Pomorski, W. de Boer, M. Ciobanu, S. Dunst, C. Grah, M. Kiš, W. Koenig, W. Lange, W. Lohmann, R. Lovrinčić, P. Moritz, J. Morse, S. Mueller, A. Pucci, M. Schreck, M. S. Rahman, et al., “Diamond detectors for hadron physics research “, Diamond and Related Materials, vol. 19, no. 5-6, pp. 358-367 (2010). [pdf]

J20.     M. S. Rahman, E.K. Evangelou, I.I. Androulidakis, A. Dimoulas, G. Mavrou and S. Galata, “SILC decay in La2O3 gate dielectrics grown on Ge substrates subjected to constant voltage stress”, Solid-State Electron. 54, 979 (2010). [pdf]

J19.     E.K. Evangelou, M. S. Rahman, I.I. Androulidakis, A. Dimoulas, G. Mavrou, K.P. Giannakopoulos, D.F. Anagnostopoulos, R. Valicu and G.L. Borchert , “Structural and electrical properties of HfO2/Dy2O3 gate stacks on Ge substrates”, Thin Solid Films 518(14), 3964 (2010). [pdf]

J18.     E. K. Evangelou, M. S. Rahman, A. Dimoulas, and S. Galata, “Defects Generation under Constant Voltage Stress in La2O3/HfO2 Gate StacksGrown on Ge Substrates”ECS Transactions, vol. 25 (6) 105-111 (2009). [pdf]

J17.     M. S. Rahman, E.K. Evangelou, I.I. Androulidakis, A. Dimoulas, “Current Transport Mechanism in High-κ Cerium Oxide (CeO2) Gate Dielectrics Grown on Germanium (Ge)”, Electrochem. Solid-State Lett., vol. 12(5), pp.H165-H168 (2009). [pdf]

J16.  M. S. Rahman, E.K. Evangelou, I.I. Androulidakis, A. Dimoulas,”Study of Stress Induced Leakage Current (SILC) in HfO2/Dy2O3 high-κ gate stacks on Germanium (100)”, Microelectronics Reliability, vol.  49, pp.26–31, (2009). [pdf]

J15.  M. S. Rahman, E.K. Evangelou, I.I. Androulidakis, A. Dimoulas, G. Mavrou, P. Tsipas; “Investigation of voltage dependent relaxation, charge trapping and stress induced leakage current (SILC) effects in HfO2/Dy2O3 gate stacks grown on Ge (100) substrates”, J.  Vac. Sci. Technol.-B, vol. 27(1), pp. 439-42 (2009). [pdf]

J14.  E.K. Evangelou, M. S. Rahman, A. Dimoulas; “Correlation of charge build-up and stress induced leakage current in Cerium oxide films on Ge (100) substrate”, IEEE Trans. Electron Devices, vol. 56,(3), pp. 399-407 (2009). [pdf]

J13.  M. S. Rahman, E.K. Evangelou, A. Dimoulas, G. Mavrou, S. Galata;” Anomalous Charge Trapping Dynamics in Cerium Oxide grown on Germanium substrate”,    J.  Applied Physics, vol. 103, 064514 (2008). [pdf]

P12      M. S. Rahman, E. Berdermann, M. Ciobanu, M. Träger M. Fischer, S. Gsell, M. Schreck,and C. Stehl, ” Memory and Polarization Effects in Heteroepitaxial ‘quasi’ Single-Crystal Diamond Detectors”  GSI Annual Scientific Report, PHN-IS-DL-09, P.249 (2011). [pdf]

P11     E. Berdermann, M. Ciobanu, M. S. Rahman, M. Träger, M. Fischer, S. Gsell, M. Schreck, and C. Stehl, ” Development of Heteroepitaxial Single-Crystal Diamond Sensors”  GSI Annual Scientific Report, PHN-IS-DL-05, P.245 (2011). [pdf]

P10      C. Stehl, M. Fischer, S. Gsell, M. Schreck, E. Berdermann, M. S. Rahman, and M. Träger, ” Growth of Heteroepitaxial CVD Diamond Films on Ir/YSZ/Si(001) for Detector Applications: Scale-Up and Crystal Quality Improvement “, GSI Annual Scientific Report, PHN-IS-DL-06, P.246 (2011). [pdf]

P9      M. S. Rahman, E. Berdermann, M. Ciobanu, M. Traeger, E. Layevski ,  C. Nebel, M. Schreck,   and   C. Stehl, ” Electrical and Photo Conductivities in Heteroepitaxial Quasi Single-Crystal CVD-Diamond Detectors”  GSI Annual Scientific Report, PHN-IS-DL-04, p.226 (2010). [pdf]

P8      E. Berdermann, M. Ciobanu, P. Moritz, M. S. Rahman, M. Träger, S. Gsell , M. Fischer , M. Schreck, and  C. Stehl, and for the CARAT Collaboration” Homogeneous Large Area CVD-Diamond Detectors for Tracking and ToF”  GSI Annual Scientific Report. PHN-IS-DL-02, p.225 (2010). [pdf]

P7     C. Stehl, S. Gsell, M. Fischer, M. Schreck, E. Berdermann, M. S. Rahman, and M. Traeger, ” Growth of Heteroepitaxial CVD Diamond Films on Ir/YSZ/Si(001) for Detector Applications”  GSI Annual Scientific Report, PHN-IS-DL-03, p.224 (2010). [pdf]

P6      E. Berdermann, W. de Boer, M. Ciobanu, S. Dunst, M. Kiš, W. Koenig, P. Moritz, J. Morse, S. Mueller, C. Nociforo, M. Pomorski, M. Schreck, M. S. Rahman, et al.,”CVD-Diamond Detectors–R&D Status and New Results”, PoS (BORMIO2010) no. 040 (2010). [pdf]

P5      E. Berdermann, M. Ciobanu, M. Henske, M. Kiš, W. Koenig, M. S. Rahman, et al., “Time resolution of Diamond Detectors for Relativistic Ions and Protons GSI Annual Scientific Reports, INSTRUMENTS-METHODS-09, p.287 (2009). [pdf]

P4      E. Berdermann, M. Ciobanu, S. Dunst, M. S. Rahman, et al., “First results of CVD-diamond detectors grown on large Iridium substrates” GSI Annual Scientific Report, INSTRUMENTS-METHODS-15, p.295 (2009). [pdf]

P3   E.K. Evangelou , M. S. Rahman, I.I. Androulidakis, A. Dimoulas, G. Mavrou and S. Galata, “SILC decay in Ge-based MOS devices with La2O3 gate dielectrics subjected to constant voltage stress”, ESSDERC 2009, p. 253 (2009). [pdf]

P2   E.K. Evangelou, I. Androulidakis, G. Papalambrakopoulos, M. S. Rahman, D. F. Anagnostopoulos, and A. Dimoulas, The 24th  National Conference Proceedings on Solid State Physics & Material Science, Crete-Greece, p.191 (2008). [pdf]

P1  M. S. Rahman, I.I.Androulidakis, E.K. Evangelou; ”Reliability Measurements of Germanium based MOS devices”, The 22nd  National Conference Proceedings on Solid State Physics & Material Science, Patras-Greece,  p.57 (2006). [pdf]