Dr. Shahinur Rahman was born in Narail, Bangladesh. He received the B.Sc. (Honors)and M.Sc. degrees in Physics from the University of Dhaka, Bangladesh, in 2000 and 2002, respectively, and the Ph.D. degree from the University of Ioannina, Ioannina, Greece, in 2009. His thesis was focused on the electrical characteristics and reliability issues of high-κ rare earth oxide gate dielectrics on germanium MOS devices.
He had been continuing his research, after his doctoral study, under a Marie Curie Fellowship, i.e., MCPAD (Postdoctoral research) of CERN, and has been with the Detector Laboratory, GSI-Helmholtzzentrum für Schwerionenforschung, Darmstadt, Germany, working on chemical-vapor-deposition (CVD) diamond detectors.
Later, he had also been a Semiconductor Radiation Detectors Expert with the OncoRay, University of Technology-Dresden, Germany, in collaboration with the Department of Radiation Physics, Helmholtzzentrum Dresden Rossendrof (HZDR).
Recently, he joined to the NaMLab-Dresden, Germany (Nanoelectronic Materials Lab), is working towards the reliability of MOS devices (especially, on the electrical reliability of SRAM and DRAM devices, as a Scientist (reliability engineer).
His current research interests include dielectric/oxide defects and electrical characterization, reliability issues of CMOS devices, Si- and Ge-based MOS devices with high-κ dielectrics, and rare earth oxides as high-κ gate dielectrics, compound semiconductor detectors, Compton cameras, radiation damage/defects in materials, detector physics and particle detectors (e.g., diamond detectors).
Dr. Rahman was awarded the Greek-state Ph.D. fellowship (IKY), a postgraduate scholarship from the University of Dhaka, and the Bangladesh Sena-Kallan scholarship (undergraduate and postgraduate). He was the recipient of the IEEE RS Scholarship 2009” from the IEEE Reliability Society, USA. [Short CV]