Invited Talks:
T4. M. S. Rahman, “Dielectric Degradation in Rare-Earth Oxides Based Gate Stacks (REOs-HfO2) Grown on High Mobility Substrates”, Institute of Electronic Materials and Devices (MBE), Leibniz University Hannover, Schneiderberg 32, D-30167 Hannover, Germany; 23 May 2012.
T3. M. S. Rahman, “High-k Dielectrics Gate Stacks Grown on High Mobility Substrates”, NaMLab gGmbH, Nöthnitzer Str. 64, D-01187 Dresden, Germany; 11 May 2012.
T2. M. S. Rahman, “Reliability Characteristics of Rare-earth Oxides (REOs) based MOS Devices”, INA, Technische Physik, University of Kassel , D-34132 ,Germany; 03 May 2012.
T1. M. S. Rahman, “Electrical Reliability Characteristics of Rare-earth Oxides (REOs) and Their Gate Stacks (HfO2-REOs) Grown on Germanium Substrates”, Semiconductor Physics, Chemnitz University of Technology, D-09126, Germany; 31 March 2011.
Conferences
C30 M. S. Rahman, High-k gate stack grown on high mobility substrates by MBE technique and its influence on device performance ‘,Deutscher MBE Workshop 2013, Dresden, Germany (Talk)
C29 M. S. Rahman, E. K. Evangelou, N. Konofaos, and A. Dimoulas, ‘Surface Passivation and Reliability Characteristics of Rare Earth (Ce, Dy, La, Gd) Oxides on High Mobility Ge Substrates’, WoDiM2012, June 25-27, 2012, Dresden, Germany (Talk)
C28 E. K. Evangelou, M. S. Rahman, N. Konofaos, and A. Dimoulas, ‘Modelling the Maxell-Wagner Instabilities in Gate Stack Dielectrics’, WoDiM2012, June 25-27, 2012, Dresden, Germany. (Poster)
C27 E. K. Evangelou, M. S. Rahman, N. Konofaos and A. Dimoulas, “Dielectric reliability degradations in rare earth oxides (REOs) based gate stacks grown on Germanium substrates”, 9th International Conference on Nanosciences & Nanotechnologies (NN12), 3-6 July 2012, Thessaloniki, Greece (Talk).
C26 M. S. Rahman, E. Berdermann, M. Ciobanu, M. Traeger, M. Schreck, C. Stehl, ‘Electrical characterization and polarization effect of the ultra fast heteroepitaxial diamond detectors’, 3rd CARAT Workshop 2011 at GSI, December 11-13, 2011, Darmstadt, Germany (Talk).
C25 M. S. Rahman E. K. Evangelou, N. Konofaos, and A. Dimoulas, ‘Electrical reliability characteristics and dielectrics degradation in gate stacks (REO-HfO2) grown on the high mobility Ge substrates’, ISDRS 2011, December 7-9, 2011, MD, USA (Talk).
C24 M. S. Rahman, “Electrical Reliability Characteristics of Rare-earth Oxides (REOs) and Their Gate Stacks (HfO2-REOs) Grown on Germanium Substrates”, Semiconductor Physics, Chemnitz University of Technology, 09126-Chemnitz, Germany, 31 March 2011 (Invited Talk)
C23 E. Berdermann, M. Ciobanu, M. Schreck, C. Stehl, M. S. Rahman, and M. Traeger , ” Development of Heteroepitaxial Single-Crystal Diamond Detectors for FAIR “, Diamond 2009, 20th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides, Bavaria, Germany, 4-8 September 2011(Talk).
C22 E. Berdermann, M. Ciobanu, M. Schreck, C. Stehl, M. S. Rahman, and M. Traeger , ” Fabrication of Heteroepitaxial Boron-doped Diamond Electrode for Electrochemical Analysis “, Diamond 2009, 20th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides, Bavaria, Germany, 4-8 September 2011(Talk).
C21 C. Stehl, E. Berdermann, M. Schreck, M. Fischer, S. Gsell, M. S. Rahman, and M. Träger, Heteroepitaxial diamond films grown on Ir/YSZ/Si(001) for detector applications”, Hasselt Diamond Workshop 2010 SBDD-XV, Belgium, February 21-23, 2011. (Poster)
C20 M. S. Rahman, E. Berdermann, M. Ciobanu, M Traeger, M. Schreck, C. Stehl” Conductivity Study of CVD Diamonds Detectors”, 2nd CARAT Workshop GSI, Darmstadt, Germany, 13-15 December 2010. (Talk)
C19 M. S. Rahman, E. K. Evangelou, and A. Dimoulas, “Maxwell-Wagner Instabilities and Defects Generation during CVS in REO-HfO2 Gate Stacks Grown on Germanium Based MOS Devices”, 218th ECS Meeting- Las Vegas, USA 12-15 October 2010. (Talk)
C18 M. S. Rahman, “Ultrafast radiation hard CVD diamond detectors for FAIR experiments” MC-PAD Network Training event, JSI, Ljubljana, Slovenia, 26-30 September 2010. (Talk)
C17 M. S. Rahman, M. Traeger, Diamond 2010, 21th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides, Budapest, Hungary, 5-9 September 2010.
C16 M. S. Rahman, “The Role of Heteroepitaxial Single Crystal-CVD Diamond Detectors For The Heavy-Ion & Hadron Physics Research” Marie Curie Conference as satellite event of ESOF 2010, Turin, Italy, 1-2 July 2010. (Poster)
C15 M. S. Rahman, E. K. Evangelou, A. Dimoulas, G. Mavrou and S. Galata, ” Current Instabilities in REO-HfO2 gate stacks grown on Germanium based MOS devices due to Maxwell-Wagner instabilities and dielectrics relaxation”, WoDiM 2010, Bratislava, Slovakia, 28-30 June 2010. (Talk)
C14 M. S. Rahman, E. Berdermann, S. Dunst, M. Schreck, M. Ciobanu, M.Traeger, “Electrical conduction in heteroepitaxial CVD Diamond on Ir/YSZ/Si(001)”, Hasselt Diamond Workshop 2010 SBDD-XV, Belgium, February 22-24, 2010. (Poster)
C13 E. Berdermann, W. De Boer, M. Ciobanu, S. Dunst, M. Kis, W. Koenig, P. Moritz, J. Morse, S. Muller, C. Nociforo, M. Pomorski, M. Schreck, M. S. Rahman, M. Traeger and H. Weick, ” CVD Diamond Detectors – R&D Status and New Results “, XLVIII International Winter Meeting on Nuclear Physics in Memoriam of Ileana Iori ‘BORMIO, Italy, 25-29 January 2010’. (Talk)
C12 E. Berdermann, M. Ciobanu, M. S. Rahman, C. Simons, M. Traeger, P. Moritz, et al., ” Earely Diamond-on-Ir (DoI) Samples”, 1st CARAT Workshop GSI, Darmstadt, Germany, 13-15 December 2009. (Talk)
C11 M. S. Rahman, E.K. Evangelou, A. Dimoulas, S. Galata, “Defects generation under constant voltage stress in La2O3/HfO2 gate stacks grown on Ge substrates”, 216th ECS Meeting- Vienna, Austria, 4-9 October 2009. (Talk)
C10 M. S. Rahman, “Diamond Detectors Characterization”, MC-PAD Network Training Event, Krakow, Poland, 17-19 September, 2009. (Poster)
C09 M. S. Rahman, E.K. Evangelou, I.I. Androulidakis, A. Dimoulas, G. Mavrou, S. Galata, “SILC decay in Ge-based MOS devices with La2O3 gate dielectrics subjected to constant voltage stress”, ESSDERC 2009, Athens, Greece, 14-18 September 2009. (Talk)
C08 E. Berdermann, M. Pomorski, W. de Boer, M. Ciobanu, S. Dunst, C. Grah, M. Kiš, W. Koenig, W. Lange,W. Lohmann, R. Lovrinčić, P. Moritz, J. Morse, S. Mueller, A. Pucci,M. Schreck, M. S. Rahman, and M. Träger, “Diamond detectors for hadron physics research”, Diamond 2009, 20th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides, Athens, Greece, 4-10 September 2009. (Talk)
C07 M. S. Rahman, I.I. Androulidakis, E.K.Evangelou, A.Dimoulas, and N. Konofaos, “Charge Trapping Detrapping Characteristics in Cerium Oxides grown on Germanium substrate”, “Nanosciences & Nanotechnologies”(NN09), Thessaloniki-Greece, 13-15 July, 2009. (Poster)
C06 M. S. Rahman, E.K. Evangelou, I.I. Androulidakis, A. Dimoulas, G. Mavrou, P. Tsipas, “Investigation of voltage dependent trap generation, charge trapping and stress induced leakage current (SILC) in high-κ HfO2/Dy2O3 gate stacks on Ge (100) MOS devices”, 15th Workshop on Dielectrics in Microelectronics, in Bad Saarow (Berlin), Germany, June 23 – 25, 2008. (Poster)
C05 M. S. Rahman, E.K.Evangelou, I.I.Androulidakis, S.Galata G.Mavrou, A.Dimoulas and D.F. Anagnostopoulos, “Reliability Characteristics of Rare Earth Oxides and their Gate Stacks on Germanium Substrate”. 23rd Natonal Conference on Solid State Physics & Material Science, Athens-Greece, 23-26 September 2007.(Talk)
C04 M. S. Rahman, E.K. Evangelou, D.F. Anagnostopoulos, I.I. Androulidakis, G.L.Borchert and R.Valicu, “Structural and Electrical properties of HfO2 / Dy2O3 gate stacks on Ge (100)”, The 14th International Symposium on Metastable and Nano Materials (ISMANAM2007), Corfu Island-Greece, 26-30 August, 2007. (Poster)
C03 M. S. Rahman, E. K. Evangelou, I.I.Androulidakis, B. Katsifas, “Interface State Dynamics and Reliability of MOS devices – Cerium Oxide based on Germanium Substrate”, 4th International Workshop on “Nanosciences & Nanotechnologies” (NN07), Thessaloniki-Greece, 16-18 July, 2007. (Poster)
C02 M. S. Rahman, E.K. Evangelou, A. Dimoulas, G. Macrou, and S. Galata, 14th biennial conference on insulating films on semiconductors (INFOS-2007), Athens-Greece, June 20-23, 2007. (Poster)
C01 M. S. Rahman, E.K. Evangalou, I.I.Androulidakis, “Study of the measurements of Reliability of Germanium based MOS devices, Pt/HfO2/Dy2O3/n-Ge”. 22nd National Conference on Solid State Physics & Material Science, Patras-Greece, 24-27 September 2006. (Poster)