Electrical and Structural characteristics of MOS devices (MOSCAPs & MOSFETs), Reliability Characterizations, e.g., Stress-Induced Leakage current (SILC), Time Dependent Dielectrics Breakdown (TDDS), Time Dependent Defects Spectroscopy (TDDB), Trap Spectroscopy by Charge Injection and Sensing (TSCIS), Life Time (LT), Oxide defects characterization, Bias Temperature Instability (BTI), Dielectric relaxation, as well as Electrical instabilities (Maxwell-Wagner Instabilities, MW-effects) in high-k gate stacks, Heavy Ion Particle Detection and Measurements, CZT Detector optimization and characterization, CVD-Diamond Detector, Front-end-electronics (Particle Detector).
Specialties
Electrical & Structural Characteristics (R&D) on Si & Ge based MOS devices (MOSCAPs & MOSFETs), Reliability Studies, High-k dielectrics, Semiconductor Technology & Device Physics; Particle (radiation) Detection and Measurements.